A. Gangulee, F.M. D'Heurle
Thin Solid Films
We have studied the post-breakdown (BD) conduction of gate oxides with thickness in the range between 1.8 and 2.5 nm. Soft post-BD I-V characteristics are generally found. In the studied range stress voltage and gate geometry play a marginal role in the level of post-BD leakage. On the contrary an increase of one order of magnitude in post-BD conduction is found under the same conditions of post-BD injected charge for an oxide thickness decrease of about 7 A. © 2002 Elsevier Science Ltd. All rights reserved.
A. Gangulee, F.M. D'Heurle
Thin Solid Films
R. Ghez, J.S. Lew
Journal of Crystal Growth
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992