Conference paper
Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
We have studied the post-breakdown (BD) conduction of gate oxides with thickness in the range between 1.8 and 2.5 nm. Soft post-BD I-V characteristics are generally found. In the studied range stress voltage and gate geometry play a marginal role in the level of post-BD leakage. On the contrary an increase of one order of magnitude in post-BD conduction is found under the same conditions of post-BD injected charge for an oxide thickness decrease of about 7 A. © 2002 Elsevier Science Ltd. All rights reserved.
Imran Nasim, Melanie Weber
SCML 2024
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
K.A. Chao
Physical Review B
Lawrence Suchow, Norman R. Stemple
JES