J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
We have studied the post-breakdown (BD) conduction of gate oxides with thickness in the range between 1.8 and 2.5 nm. Soft post-BD I-V characteristics are generally found. In the studied range stress voltage and gate geometry play a marginal role in the level of post-BD leakage. On the contrary an increase of one order of magnitude in post-BD conduction is found under the same conditions of post-BD injected charge for an oxide thickness decrease of about 7 A. © 2002 Elsevier Science Ltd. All rights reserved.
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Imran Nasim, Melanie Weber
SCML 2024
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP