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Journal of Rheology
The density of states in heavily doped silicon can be derived from the electronic effect on a shear elastic constant. The density of states found in this way confirms the anomalous values obtained from specific heat measurements. © 1979.
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
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Surface Science
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Molecular Physics
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IEDM 1998