Density of states of degenerate n-type silicon from elastic constants

R.W. Keyes

doi:10.1016/0038-1098(79)91083-4

Solid State Communications

Paper

01 Jan 1979

Density of states of degenerate n-type silicon from elastic constants

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Abstract

The density of states in heavily doped silicon can be derived from the electronic effect on a shear elastic constant. The density of states found in this way confirms the anomalous values obtained from specific heat measurements. © 1979.

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