Density of &quot;amorphous&quot; Ge

T.B. Light

doi:10.1103/PhysRevLett.22.999

Physical Review Letters

Paper

12 May 1969

Density of "amorphous" Ge

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Abstract

The density of vapor-deposited "amorphous" Ge was determined from x-ray-diffraction absorption measurements and found to be the same as the density of crystalline Ge within ±5%. © 1969 The American Physical Society.

Paper

Accommodation of misfit across the interface between crystals of semiconducting elements or compounds

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A determination of the thermal expansion of pure Ge and a measurement of the differential thermal expansion of a GeSingle Bond signGaAs thin-layer couple

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Structure of thin lead oxide layers as determined by x-ray diffraction

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Preferred orientation in bias-sputtered nickel chromium films

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Abstract

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Accommodation of misfit across the interface between crystals of semiconducting elements or compounds

A determination of the thermal expansion of pure Ge and a measurement of the differential thermal expansion of a GeSingle Bond signGaAs thin-layer couple

Structure of thin lead oxide layers as determined by x-ray diffraction

Preferred orientation in bias-sputtered nickel chromium films