Conference paper
Sub-10 nm carbon nanotube transistor
Aaron D. Franklin, Shu-Jen Han, et al.
IEDM 2011
We demonstrate np+n InAs bipolar transistors that operate under room temperature and cryogenic conditions. InAs transistors on an InP substrate were characterized as a function of temperature and exhibited good room temperature and low temperature common-emitter characteristics. Although the base doping density exceeded the emitter doping density by a factor of 20, current gains of 30 were achieved at room temperature. Junction leakage currents and contact resistance were identified as problems to address.
Aaron D. Franklin, Shu-Jen Han, et al.
IEDM 2011
Siyuranga O. Koswatta, Vasili Perebeinos, et al.
IEDM 2007
Yang Liu, Mathieu Luisier, et al.
IEEE T-ED
David F. Heidel, Paul W. Marshall, et al.
IEEE TNS