G. Landgren, R. Ludeke
Solid State Communications
Paper
Delocalization effects at metal-semiconductor interfaces
Abstract
Changes with onset of metallic behavior in the position of an impurity-stabilized Fermi level at the GaAs-Ag interface are interpreted in a model based on delocalization of the impurity levels. The resulting energy broadening of interface states appears to be an important mechanism underlying the Schottky behavior; in particular the model obviates the need for separate donor or acceptor properties of the impurity levels. © 1988 The American Physical Society.
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