R. Ludeke, L.L. Chang, et al.
Applied Physics Letters
Changes with onset of metallic behavior in the position of an impurity-stabilized Fermi level at the GaAs-Ag interface are interpreted in a model based on delocalization of the impurity levels. The resulting energy broadening of interface states appears to be an important mechanism underlying the Schottky behavior; in particular the model obviates the need for separate donor or acceptor properties of the impurity levels. © 1988 The American Physical Society.
R. Ludeke, L.L. Chang, et al.
Applied Physics Letters
R. Ludeke, E. Cartier
Applied Physics Letters
J.A. Yarmoff, A. Taleb-Ibrahimi, et al.
Physical Review Letters
Chin-An Chang, R. Ludeke, et al.
Applied Physics Letters