Publication
IRPS 2004
Conference paper

Degradation of ultra-thin oxides with Tungsten gates under high voltage: Wear-out and breakdown transient

Abstract

An analysis of the dynamics of degradation of ultra-thin gate SiO 2 films under accelerated high voltage stress, from the growth of defect concentration up to the final phase of the oxide breakdown, was performed on MOS samples with Tungsten as gate material.

Date

Publication

IRPS 2004

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