David B. Laks, Chris G. Van De Walle, et al.
Applied Physics Letters
Defects in amorphous Si are universally viewed as due to undercoordinated atoms. The dominant EPR-active center is identified as threefold-coordinated Si (dangling bond), but evidence is inconclusive. I introduce a new viewpoint, motivated by results on defects in crystalline Si, and conclude that overcoordination defects are as likely. I propose that most EPR-active centers are fivefold-coordinated Si, with an electron in a state that I label "floating bond." This new analysis is favored by experiments and theory and leads to new predictions. © 1986 The American Physical Society.
David B. Laks, Chris G. Van De Walle, et al.
Applied Physics Letters
Sokrates T. Pantelides, L. Tsetseris, et al.
ECS Meeting 2009
J. Pollmann, Sokrates T. Pantelides
Physical Review B
Sokrates T. Pantelides
Reviews of Modern Physics