Publication
Applied Physics Letters
Paper

Defect formation in SiO2/Si(100) by metal diffusion and reaction

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Abstract

The decomposition of SiO2 films on Si(100) during ultrahigh vacuum anneal is found to be strongly enhanced by monolayer amounts of impurities deposited on the SiO2 surface. s- and p-band elements initiate decomposition via formation of volatile suboxides by surface reaction, whereas most transition metals decompose the oxide via laterally inhomogeneous growth of voids in the oxide. Transition metals need to diffuse to the SiO 2/Si interface to enhance oxide decomposition via formation of volatile SiO. It is inferred that transition metal particles should be efficient in creating electrical defects in gate oxide layers.

Date

01 Dec 1988

Publication

Applied Physics Letters

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