Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Some of the sputter broadening effects on profile measurements using the Auger sputtering technique have been quantitatively investigated for Ag Au and Cu Ni systems. Two methods have been used to measure the resolution function as a function of the sputter distance for these two systems. The broadening can be separated into contributions from original surface roughness and sputtering effects, the latter amounting to about 7% of the sputter depth for Cu Ni and 14% for Ag Au interfaces. Based on the measured resolution function, a deconvolution method has been developed to facilitate the retrieval of the actual profile from the observed profile by reducing the sputter broadening. Using this method, we found that the measured interfacial profile can be substantially sharpened. The implications of using the deconvolution method for interdiffisuion studies in thin films are discussed. © 1976.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials