D.c conduction in sio₂ films at elevated temperatures

Abstract

The temperature dependence of steady-state electronic conduction in SiO2 films was investigated using metal-oxide-silicon capacitors. To remove anomalies due to space charge polarization, a special experimental procedure was employed whereby the steady state current measurement was made at decreasing applied voltage or temperature. Experimental data will be presented to show that Schottky thermionic emission and Schottky-like field emission have been, for the first time to the author's knowledge, observed in SiO2 at temperatures above 300°C. The self-consistency of the data will be discussed. © 1972 The Metallurgical of Society of AIME.