Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
A substantially improved estimate of the critical angles for boron ion channeling in single-crystal silicon is reported. The ZBL Si-B specific ‘interatomic potential has been used for the critical angle calculations because the universal potentials significantly overestimate the potential at larger interatomic separations. The new results are of significant importance in that they indicate that the critical angles are much smaller than the previously reported results which were based on the Thomas-Fermi potential. These new results are well supported by experimental observations of the distributions of boron implanted into single-crystal silicon. © 1991, The Electrochemical Society, Inc. All rights reserved.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT