About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Applied Physics
Paper
Correlation between resistivity and diffusion in thin films
Abstract
Empirical equations have been derived that relate resistivity to diffusivity and activation energies for thin films. Results for the Cr/Au structure agree with published data on the interdiffusion of Cr and Au thin films at temperatures ranging from 350 to 450 °C. The following relationships were determined: Δρ/ρ0C=λ exp(-Q/kT); Δρ/ρ0C=nDt/χ2; Δρ/ρ0C=ψ exp(-χ2/4Dt) and D=Nχ2 /t exp(-Q/kT), where Nχ2/t=D 0(cm2/s) is the frequency factor; Δρ is the change in resistivity; ρ0 is the room temperature resistivity; χ is film thickness; T is temperature; t is time; C is concentration; k is Boltzman's constant; D is diffusion coefficient; and n, ψ, N, and λ are constants. Analysis of the Cr/Au resistivity data using these equations gives D0=1.2×10-7 cm2/s and Q=1.00 eV for Cr diffusion in Au; and D0=1.0×10-7 cm 2/s and Q=1.06 eV for Au diffusion in Cr. These values were verified by analysis using Rutherford backscattering spectroscopy and, they are consistent with those reported for grain boundary diffusion.