Publication
Journal of Applied Physics
Paper

Correlation between resistivity and diffusion in thin films

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Abstract

Empirical equations have been derived that relate resistivity to diffusivity and activation energies for thin films. Results for the Cr/Au structure agree with published data on the interdiffusion of Cr and Au thin films at temperatures ranging from 350 to 450 °C. The following relationships were determined: Δρ/ρ0C=λ exp(-Q/kT); Δρ/ρ0C=nDt/χ2; Δρ/ρ0C=ψ exp(-χ2/4Dt) and D=Nχ2 /t exp(-Q/kT), where Nχ2/t=D 0(cm2/s) is the frequency factor; Δρ is the change in resistivity; ρ0 is the room temperature resistivity; χ is film thickness; T is temperature; t is time; C is concentration; k is Boltzman's constant; D is diffusion coefficient; and n, ψ, N, and λ are constants. Analysis of the Cr/Au resistivity data using these equations gives D0=1.2×10-7 cm2/s and Q=1.00 eV for Cr diffusion in Au; and D0=1.0×10-7 cm 2/s and Q=1.06 eV for Au diffusion in Cr. These values were verified by analysis using Rutherford backscattering spectroscopy and, they are consistent with those reported for grain boundary diffusion.

Date

01 Dec 1991

Publication

Journal of Applied Physics

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