Corrections to proximity effects in electron beam lithograhy. III. Experiments

Abstract

Satisfactory corrections to intershape and intrashape proximity effects in electron lithography have been experimentally obtained for a variety of patterns and geometries. The self-consistent formulation and the algorithms for computation described in the two preceeding papers have been used. The computer program used for the automatic computation of corrections to the incident electron exposure for an arbitrary pattern is described. Pattern delineation depends on the proximity function and its parameters. They are found to be not critical in practical lithography until submicron dimensions are reached.