Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
The materials, processes, and reliability issues in the development of multi-level Cu chip interconnections are described. Fully integrated four-level Cu/polyimide structures have been fabricated by using a damascene process which maintains planarity at each level. Electromigration lifetime for two-level Cu interconnections is found to be more than two orders of magnitude longer than that of Al(Cu) while having approximately twice the conductivity. © 1998 Elsevier Science S.A.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics