Conference paperSwitching distributions and write reliability of perpendicular spin torque MRAMD.C. Worledge, G. Hu, et al.IEDM 2010
PaperSpin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropyMartin J. Gajek, J. Nowak, et al.Applied Physics Letters
PaperA High-Speed 128-kb MRAM Core for Future Universal Memory ApplicationsJohn DeBrosse, Dietmar Gogl, et al.IEEE Journal of Solid-State Circuits
PaperTwo-level BEOL processing for rapid iteration in MRAM developmentMichael C. Gaidis, Eugene J. O'Sullivan, et al.IBM J. Res. Dev
