Publication
Applied Physics Letters
Paper

Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

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Abstract

The controlled incorporation of carbon has been demonstrated for the metalorganic vapor phase epitaxy of GaAs. Carbon levels between 1016 and 1019 cm-3 can be achieved under typical growth conditions by using Ga(CH3)3 and either As(CH 3)3 or mixtures of As(CH3)3 and AsH3. The carbon incorporation into GaAs goes through a minimum with growth temperature at ∼650 °C when using Ga(CH3)3 and As(CH3)3. The controlled addition of AsH3 monotonically decreases the carbon incorporation. The high carbon levels (≳1-2×1019 cm-3), greater than the reported solid solubility, are thermally stable with a low diffusion coefficient. The GaAs:C layers exhibit a low deep level concentration, ∼1013 cm-3, with only a single midgap trap present.

Date

01 Jan 1988

Publication

Applied Physics Letters

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