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Publication
IEDM 2016
Conference paper
Contact resistivities in gamma-valley materials
Abstract
A model for contact resistivities of materials such as n-type III-V semiconductors with gamma-valley symmetry is developed which goes beyond current models in including non-parabolicity and screening effect of electrons on the Schottky barrier. These raise the contact resistivity, so that strategies involving negative barrier heights and interface velocity matching may be necessary to reach ITRS targets.