Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon
Lukas Czornomaz, N. Daix, et al.
ESSDERC 2013
Integration of magnetic impurities into semiconductor materials is an essential ingredient for the development of spintronic devices such as dilute magnetic semiconductors. While successful growth of ferromagnetic semiconductors was reported for III-V and II-VI compounds, efforts to build devices with silicon technology were hampered by segregation and clustering of magnetic impurities such as manganese (Mn). Here, we report on a surface-based integration of Mn atoms into a silicon host. Control of Mn diffusion and low-temperature silicon epitaxy lead to confined Mn δ-layers with low interface trap densities, potentially opening the door for a new class of spintronic devices in silicon. © 2013 American Institute of Physics.
Lukas Czornomaz, N. Daix, et al.
ESSDERC 2013
Lukas Czornomaz, Emanuele Uccelli, et al.
VLSI Technology 2015
Herwig Hahn, Veeresh Deshpande, et al.
IEDM 2017
Clarissa Convertino, L. Vergano, et al.
EUROSOI-ULIS 2020