Compound semiconductor surface and interface problems in liquid phase epitaxy (lpe)

Abstract

The morphologies observed on layers of III-V compounds and their alloys grown by Liquid Phase Epitaxy (LPE) are reviewed; these include: facets, terraces and the effect of small misorientation of the substrate; effects due to both the moving and the static three-phase boundary line on the surface of the crystal; nucleation effects; and the effects of insoluble particles in they solutions. © 1982 SPIE.