About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
VLSI Design
Paper
Complete RF analysis of compound FETs based on transient Monte Carlo simulation
Abstract
In this paper we described a complete methodology to extract the RF performance of 'real' compound FETs from time domain Ensemble Monte-Carlo (EMC) simulations which can be used for practical device design. The methodology is based on transient finite element EMC simulation of realistic device geometry. The extraction of the terminal current is based on the Ramo-Shockley theorem. Parasitic elements like the gate and contact resistances are included in the RF analysis at the post-processing stage. Example of the RF analysis of pseudomorphic HEMTs illustrates our approach.