3D parallel finite element simulation of in-cell breakdown in lateral-channel IGBTs

Abstract

In this paper we describe the use of 3D parallel finite element solution of the Poisson equation to calculate the in-cell breakdown voltage in lateral channel IGBTs. The solver is based on topologically rectangular grids, and uses a domain decomposition approach to partition the problem on an array of mesh connected processors. A parallel BiCGSTAB solver has been developed to solve the Possion equation. Hole and electron ionisation integrals are calculated to determine the breakdown voltage. The effects of varying the doping concentration in the n- base region and stopper surface concentration are investigated.