Comparison of magnetocurrent and transfer ratio in magnetic tunnel transistors with spin-valve bases containing Cu and Au spacer layers

Abstract

The magnetocurrent (MC) and transfer ratio in magnetic tunnel transistors (MTT) was compared with spin-valve bases containing Cu and Au spacer layers. The importance of interface scattering in MTTs and spin valves was identified. The results showed that the MC of an MTT, which originated from hot-electron transport perpendicular to spin-valve base structure, was similar for Cu and Au spacer layers.