A tunneling pair recombination model has been proposed to describe the themostimulated luminescence in an earlier paper (1). Under the same concept but assuming two tunneling levels for the electron trap, a description of phosphorescence decay (PP via one tunneling level) and photostimulated luminescence (PSL via a second tunneling level) is presented. Experimental results on PP and PSL for manganese-doped silicates with and without arsenic codoping are reported. A novel method of comparing PP and PSL in the temperature and time domain leads to the determination of energy values of the tunneling states. © 1983, The Electrochemical Society, Inc. All rights reserved.