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Publication
SISPAD 2012
Conference paper
Compact models for real device effects in FinFETs: Quantum-mechanical confinement and double junctions in FinFETs
Abstract
A novel geometrically scalable, phenomenological model for quantum mechanical carrier charge centroid in thin fins is presented. A model for capturing the capacitance characteristics of a graded double-junction arising out of punchthrough stop implant in bulk-FinFETs is also proposed. Developed models have been included in BSIM-CMG multi-gate transistor compact model.