R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
It is pointed out that effect of an applied gate voltage on the critical current observed in a gate-controlled Si-coupled weak link by Nishino, Yamada, and Kawabe [Phy. Rev. B 33, 2042 (1986)] is much larger than that expected from the small change of carrier density in the link. © 1987 The American Physical Society.
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
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