D. Goren, M. Zelikson, et al.
DAC 2003
This study presents a new sensor for Terahertz Imaging, dubbed here as TeraMOS, which is based on several leading technologies: CMOS-SOI (Silicon on Insulator), MEMS (Micro Electro Mechanical Systems) and Terahertz Photonics. The paper focuses on the electrical characterization of CMOS-SOI "virgin" (unreleased) transistors fabricated in the IBM 0.18μm RF CMOS-SOI advanced process. By applying MEMS post processing to thermally isolate the transistors, the resulting CMOS-SOI-MEMS transistors become highly sensitive active bolometers - the TeraMOS sensors. The measured Temperature Coefficient of Current (TCC) as a function of temperature, gate voltage and drain current is presented. A new suggested figure of merit for the TeraMOS sensors is defined by TCC2·I and measured values of it are presented.
D. Goren, M. Zelikson, et al.
DAC 2003
D. Goren, B. Sheinman, et al.
COMCAS 2008
A. Sayag, S. Levin, et al.
COMCAS 2008
D. Goren, E. Shamsaev, et al.
DAC 2001