Douglas M. Gill, Jonathan E. Proesel, et al.
IEEE JSTQE
A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 ± 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into frontend CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©2010 Optical Society of America.
Douglas M. Gill, Jonathan E. Proesel, et al.
IEEE JSTQE
Solomon Assefa, Fengnian Xia, et al.
IEEE Journal on Selected Topics in Quantum Electronics
Thomas N. Adam, Stephen W. Bedell, et al.
ECS Transactions
Yurii A. Vlasov, Fengnian Xia, et al.
CLEO 2008