Solomon Assefa, Fengnian Xia, et al.
CLEO 2010
A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 ± 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into frontend CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©2010 Optical Society of America.
Solomon Assefa, Fengnian Xia, et al.
CLEO 2010
Fengnian Xia, Vasili Perebeinos, et al.
Nature Nanotechnology
Fengnian Xia, Hugen Yan, et al.
Proceedings of the IEEE
Jessie Rosenberg, William M. J. Green, et al.
CLEO 2011