Alexander Rylyakov, Clint Schow, et al.
ISSCC 2011
A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 ± 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into frontend CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©2010 Optical Society of America.
Alexander Rylyakov, Clint Schow, et al.
ISSCC 2011
Eric Dulkeith, Fengnian Xia, et al.
Optics Express
Jens Hofrichter, William M. J. Green, et al.
GFP 2011
Yurii A. Vlasov, Fengnian Xia, et al.
QELS 2008