Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
We report high-speed planar silicon p-i-n photodiodes fabricated on Silicon-on-Insulator (SOI) substrates. The devices were fabricated in standard CMOS technology with no additional fabrication steps required. The 250-nm finger-spacing devices exhibited 15- and 8-GHz bandwidths for devices processed on 200- and 2000-nm SOI substrates, respectively, at a reverse bias of -9 V. Quantum efficiencies of 12% and 2% were measured on the 2- and 0.2-μm thick SOI, respectively. The dark current was 5 pA for -3 V bias and 500 μA for -9 V bias.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
H.D. Dulman, R.H. Pantell, et al.
Physical Review B