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IEEE International SOI Conference 2005
Conference paper

Circuit to measure high speed pulse I-V characteristics with only DC I/O's

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Abstract

We have implemented a new approach for measuring the pulse I-V characteristics of a set of nominally identical MOSFETs. In this scheme, all high speed signals are contained entirely inside the test structure itself. Only DC inputs and outputs are required for direct measurement of both DC and AC I-V characteristics at frequencies up to the GHz range. © 2005 IEEE.

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IEEE International SOI Conference 2005

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