Publication
Applied Physics Letters
Paper

Chemistry of fluorine in the oxidation of silicon

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Abstract

The chemical environment of fluorine in the oxide layer of metal-oxide-semiconductor (MOS) structures has been examined by surface analytical spectroscopies. HF treatment of Si(100) results in subsurface SiF formation. Upon oxidation, oxyfluoride moieties are formed with a significant accumulation of fluorine throughout the oxide layer. These changes are correlated to the electrical integrity of MOS interfaces by performing Fowler-Nordheim electron injection studies.

Date

01 Dec 1991

Publication

Applied Physics Letters

Authors

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