Zejiao Shi, Jia Guo, et al.
Advanced Materials
Solution-based processing of two-dimensional (2D) materials provides the possibility of allowing these materials to be incorporated into large-area thin films, which can translate the interesting fundamental properties of 2D materials into available devices. Here, we report for the first time a novel chemical-welding method to achieve high-performance flexible n-type thermoelectric films using 2D semimetallic TiS2 nanosheets. We employ chemically exfoliated TiS2 nanosheets bridged with multivalent cationic metal Al3+ to cross-link the nearby sheets during the film deposition process. We find that such a treatment can greatly enhance the stability of the film and can improve the power factor by simultaneously increasing the Seebeck coefficient and electrical conductivity. The resulting TiS2 nanosheet-based flexible film shows a room temperature power factor of 216.7 μW m-1 K-2, which is among the highest chemically exfoliated 2D transition-metal dichalcogenide nanosheet-based films and comparable to the best flexible n-type thermoelectric films, to our knowledge, indicating its potential applications in wearable electronics.
Zejiao Shi, Jia Guo, et al.
Advanced Materials
Chaochao Dun, Corey A. Hewitt, et al.
Chemistry of Materials
Chaochao Dun, Corey A. Hewitt, et al.
Advanced Materials
Zhiyong Wang, Laiyuan Wang, et al.
Advanced Materials