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IEEE T-ED
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Characterization and Analysis of Random Telegraph Noise in Scaled SiGe Channel HKMG pMOSFETs

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Abstract

Here for the first time, we report on the characterization and analysis of random telegraph noise (RTN) in silicon-germanium (SiGe) channel pMOSFETs without a silicon-cap layer. A detailed analysis of traps causing two-level RTN is presented. The trap parameters and RTN magnitude are computed. It was observed that the impact of RTN is similar when compared with silicon channel pFETs from a similar process node with a comparable {T} {\text{inv}}.

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IEEE T-ED

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