Channeling of ions near the silicon 〈001〉 axis

J.F. Ziegler; R.F. Lever

doi:10.1063/1.95630

Applied Physics Letters

Paper

01 Jan 1985

Channeling of ions near the silicon 〈001〉 axis

View publication

Abstract

The first experimental mapping of ion beam channels near the Si 〈001〉 axis is reported. All features are identified by theoretical plots of silicon planar channels and axial channels.

Paper

Determination of the near-surface elemental composition of catalysts by the technique of proton-induced X-ray analysis

J.A. Cairns, A. Lurio, et al.

Journal of Catalysis

Paper

Boron diffusion in silicon at high concentrations

W.A. Orr Arienzo, R. Glang, et al.

Journal of Applied Physics

Paper

Chemical transport in nonconvective systems

R.F. Lever, F. Jona

AIChE Journal

Paper

Epitaxy of germanium films on gallium arsenide by vacuum evaporation

R.F. Lever, E.J. Huminski

Journal of Applied Physics

View all publications

Abstract

Related

Determination of the near-surface elemental composition of catalysts by the technique of proton-induced X-ray analysis

Boron diffusion in silicon at high concentrations

Chemical transport in nonconvective systems

Epitaxy of germanium films on gallium arsenide by vacuum evaporation