Amal Kasry, Mostafa El Ashry, et al.
Thin Solid Films
This letter presents a detailed study of transport in graphene field-effect transistors (GFETs) with various channel lengths, from 5 μm down to 90 nm, using transferred graphene grown by chemical vapor deposition. An electronhole asymmetry observed in short-channel devices suggests a strong impact from graphene/metal contacts. In addition, for the first time, we observe a shift of the gate voltage at the Dirac point in graphene devices as a consequence of gate length scaling. The unusual shift of the Dirac point voltage has been identified as one of the signatures of short-channel effects in GFETs. © 2011 IEEE.
Amal Kasry, Mostafa El Ashry, et al.
Thin Solid Films
Shu-Jen Han, Satoshi Oida, et al.
DRC 2013
Amal Kasry, Ali A. Afzali, et al.
Chemistry of Materials
Aaron D. Franklin, Shu-Jen Han, et al.
IEEE Electron Device Letters