Linearity of graphene field-effect transistors

Abstract

The linearity of the radio frequency response of graphene field-effect transistors has been measured as a function of gate bias using the two-tone method. Two kinds of transistors, which differ in both the graphene source material and the device structure, have been compared. Both devices show high linearity compared to contemporary silicon transistors. The physical origins of this behavior are analyzed and discussed. © 2013 AIP Publishing LLC.