Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Interfaces have a strong effect on the energy levels and transport properties of carriers in inversion and accumulation layers, in quantum wells and superlattices, and at heterojunctions. The effects on energy levels are discussed briefly and the scattering effects are discussed in more detail, including the consequences of a change in effective mass across a heterojunction interface. Edge scattering in narrow inversion layer channels is considered briefly. © 1983.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
Ellen J. Yoffa, David Adler
Physical Review B