Calculation of Schottky barrier heights from semiconductor band structures

Abstract

Models of Schottky barrier formation based on intrinsic interface or surface states suggest Fermi-level pinning at or near some effective mid-gap energy EB. This energy can be calculated directly from the bulk semiconductor band structure. Details of the calculation of EB and hence of Schottky barrier heights, as well as heterojunction band line-ups, are given here. © 1986.