Publication
Superlattices and Microstructures
Paper

Calculated effects of interface grading in GaAs-Ga1-xAlxAs quantum wells

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Abstract

Effects of interface grading on energy levels of electrons in GaAsGa1-xAlxAs quantum wells have been estimated using both a tight-binding formalism and an effective-mass Hamiltonian of the BenDaniel-Duke form. Graded interfaces a few atomic layers thich have only a small effect on energy levels in both schemes. Self-consistent calculations for electrons in a relatively wide (40 nm) quantum well show how the lowest levels change from those characteristic of the empty well to those characteristic of two weakly coupled heterojunctions as the electron density is increased. © 1985.

Date

01 Jan 1985

Publication

Superlattices and Microstructures

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