The DX centre
T.N. Morgan
Semiconductor Science and Technology
High molecular weight block interrupt polysilane derivatives have been prepared by the condensation of a number of α,ω‐dichloropolysilanes with some aromatic bis silanols. In this manner, polymers containing polysilane blocks of 2, 4, or 6 catenated silicon atoms have been prepared. The materials are thermally stable and the UV spectroscopic properties mimic those of the corresponding monomers. Although these materials bleach upon irradiation in the deep UV, surprisingly, the block interrupt polysilanes behave as negative resists upon exposure to 254 nm radiation. This behavior contrasts with that of standard polysilane homopolymers which usually function in a positive lithographic mode. Copyright © 1990 John Wiley & Sons, Inc.
T.N. Morgan
Semiconductor Science and Technology
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Imran Nasim, Melanie Weber
SCML 2024
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010