Bistable switching in ZrZrO2Au junctions
Abstract
Bistable switching has been observed in ZrZrO2Au junctions. The resistance ratio is as high as 104. Significant physical changes have occurred during forming and subsequent switching of these junctions. The physical changes were observed by optical microscope, scanning electron microscope, and electron microprobe techniques. The temperature changes and profiles were observed by the liquid crystal technique during forming and switching. These studies indicate that in the low resistance state the current is carried by a single filament centered around one of the spots formed while switching from the high resistance state to the low resistance state. A voltage controlled negative resistance was observed for the junction in the low resistance state. © 1970.