A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The transfer of an Al atom between tip and sample in the scanning tunneling microscope is analyzed theoretically. The bias required to reduce the activation barrier for transfer to zero is a strong function of tip-sample separation, changing from ∼5 to ∼0.5 V over a separation range of 2. The degree of bias-induced ionization of the atom is found to be small for the range of separations studied. © 1994 The American Physical Society.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010