Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
The surface band gap of the Ge (111) c (2×8) surface at low temperature is determined on the basis of scanning tunneling spectroscopy. Electrostatic potential computations permit evaluation of tip-induced band bending, from which a correction to the energy scale of the observed spectra is made. Parameter values in the computations are constrained by comparison of the observed spectrum with known spectral features, including high-lying conduction band features derived from first-principles computations. The surface band gap, lying between the bulk valence band maximum and the minimum of an adatom-induced surface band, is found to have a width of 0.49±0.03 eV. © 2006 The American Physical Society.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
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Digital Discovery
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Zeitschrift fur Kristallographie - New Crystal Structures