N.J. Chou, S.K. Lahiri, et al.
The Journal of Chemical Physics
Phosphorus redistribution during thermal oxidation of degenerately doped silicon was investigated using Auger electron spectroscopy and ellipsometry. Concentration profiles were determined with a combination of chemical and sputter etching techniques. A substantial phosphorus pileup was observed in the oxide in a thin layer near the ellipsometrically determined Si-SiO2 interface. Calibrated against standards of known concentration, this layer was found to contain -2 x 1021 phosphorus atoms/cm3, independent of the oxidation temperature between 850° and 1000 °C. © 1974 IOP Publishing Ltd.