Publication
Japanese Journal of Applied Physics
Paper

Auger and ellipsometric study of phosphorus segregation in oxidized degenerate silicon

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Abstract

Phosphorus redistribution during thermal oxidation of degenerately doped silicon was investigated using Auger electron spectroscopy and ellipsometry. Concentration profiles were determined with a combination of chemical and sputter etching techniques. A substantial phosphorus pileup was observed in the oxide in a thin layer near the ellipsometrically determined Si-SiO2 interface. Calibrated against standards of known concentration, this layer was found to contain -2 x 1021 phosphorus atoms/cm3, independent of the oxidation temperature between 850° and 1000 °C. © 1974 IOP Publishing Ltd.

Date

12 Mar 2014

Publication

Japanese Journal of Applied Physics

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