Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
The homoepitaxial growth of InP on a prepared InP(001) substrate, having initially a surface covered by ⟨110⟩-oriented ridges, can produce planar defects originating from the ridge region. A high-resolution electron microscopy (HREM) investigation of these defects has been undertaken, showing that a high density of stacking faults and ultra-thin [Sgrave] = 3 twins are present. A detailed characterization of the (111) extended twin facets is performed using simulations of the HREM images. Two consecutive twin tips can be linked an intrinsic fault bridge limited two 1/6⟨110⟩ dislocations. Other tips have a 1/6⟨112⟩ total Burgers vector content. © 1994 Taylor & Francis Group, LLC.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
J.C. Marinace
JES