Atomic structure and bonding of Si(111)-(V3 x v 3)AI

Abstract

The topographic structure and density of occupied and unoccupied states of the Si (111) - (vTxvT)Al surface are studied using scanning tunneling microscopy (STM) and current imaging tunneling spectroscopy. Tunneling spectroscopy results are compared with theoretical band structure calculations and previous experimental studies. The results confirm a threefold adatom geometry for V3A1/Si(111) and prefer assignment to the T4 site over the H3. The STM images are interpreted in terms of tunneling through localized electronic states at the surface. © 1988, American Vacuum Society. All rights reserved.