Analysis of quantum ballistic electron transport in ultrasmall silicon devices including space-charge and geometric effects

Abstract

The quantum ballistic electron transport in ultrasmall silicon devices including space-charge and geometric effects were discussed. The study was carried out by using the Schrödinger and Poisson equations with current flow. The continuous energy spectrum of the system was discretized by two different forms of closed boundary conditions, resulting in energies which sample the density-of-states. It was also observed that the three different structures which include termed straight, taper and dog bone were compared in order to evaluate the effects of three different channel access geometries on device current.