Publication
IEEE International SOI Conference 2011
Conference paper
Analysis of parasitic resistance in double gate FinFETs with different fin lengths
Abstract
A significant increase in parasitic resistance (R PARA) fluctuation is observed when S/D length is getting smaller than the characteristic length (L TRANS). Resistance change evaluated on double gate finFETs with various fin lengths shows an excellent agreement between the experimental data and the analytical model. Further R PARA fluctuation improvement can be realized by optimizing the L TRANS. © 2011 IEEE.