P.C. Pattnaik, D.M. Newns
Physical Review B
An instrument is described that can be used to monitor, with unprecedented sensitivity, changes in the optical reflectivity due to crystailine damage incurred during ion implantation. It is shown that at the shot-noise limit, changes in the optical reflectivity of silicon as small as 5·10-7 can be measured in a 10 Hz bandwidth with a signal-to-noise ratio of 100, corresponding to an extrapolated uniform implantation dose of 5·108 cm-2 for 11B+ at 50 keV in silicon. © 1992 Springer-Verlag.
P.C. Pattnaik, D.M. Newns
Physical Review B
David B. Mitzi
Journal of Materials Chemistry
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
T.N. Morgan
Semiconductor Science and Technology