F. Tong, C.-S. Li, et al.
Electronics Letters
This brief extends the general proof of the Ebers-Moll reciprocity theorem to include high-level injection conditions in bipolar base regions. The theorem, originally derived for the low-level case, is shown to be valid in the high-level limit, as long as the emitter injection efficiency is sufficiently high in both reciprocal configurations. © 1990 IEEE
F. Tong, C.-S. Li, et al.
Electronics Letters
F. Tong, C.-S. Li, et al.
IEEE Photonics Technology Letters
F. Tong, Karen Liu, et al.
LEOS 1994
K. Jackson, E.B. Flint, et al.
Journal of Lightwave Technology