Conference paper
InAs/GaAs quantum well lasers grown by atomic layer epitaxy
M.A. Tischler, N.G. Anderson, et al.
Proceedings of SPIE 1989
An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 Å/minute, a factor of over 3000 times less than for unpassivated silicon. Copyright © 1981 by The Institute of Electrical and Electronics Engineers, Inc.
M.A. Tischler, N.G. Anderson, et al.
Proceedings of SPIE 1989
A.W. Kleinsasser, T.N. Jackson, et al.
IEEE T-ED
D.J. Gundlach, L. Zhou, et al.
Technical Digest-International Electron Devices Meeting
R.W. Ade, E.R. Fossum, et al.
Proceedings of SPIE 1989